FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 210

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
Discrete IGBT (SMPS II)
FG H
30
(Continued)
N 6
S
2
D
D: Integral Reverse Diode
i.e., 2 = SMPS II (UIS, LGC, LVp)
S: SMPS
M: Motor Drive
I: Induction Heating
C: Camera Flash
i.e., (600)
N-Channel or P-Channel
D: 3 Lead TO-252
B: 3 Lead TO-263
P: 3 Lead TO-220
H: 3 Lead TO-247
L: 3 Lead TO-264
J: 3 Lead TO-268
K: 3 Lead TO-247ST
Options
General Application
Intended Application
Voltage Breakdown/100
Polarity
Relative Die Size
Package
Fairchild IGBT
8-17
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