FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 177

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Diodes (Continued)
BAW56
MMBD1205
MMBD4148CA
BAS35
MMBD1405
MMBD1505A
MMBD1405A
MMBD1704A
BAV74
BAV70
MMBD2838
MMBD1204
MMBD4148CC
MMBD1404
MMBD1504A
MMBD1404A
MMBD1703
BAV99
MMBD1203
MMBD4148SE
MMBD7000
BAS31
MMBD1403
MMBD1503A
FLLD261
BAV23S
MMBD1403A
MMBD1701
BAS16
MMBD1201
MMBD4148
MMBD4448
MMBD914
BAS19
BAS29
BAS20
Products
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Cathode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Dual & Common Anode
Configuration
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Dual Series
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
100
100
125
200
200
250
100
100
200
200
250
100
100
100
125
200
200
200
250
250
100
100
100
100
120
120
200
(V)
85
30
50
70
75
30
70
30
85
RRM
I
0.15
0.15
0.15
F (AV)
(A)
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.4
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
2-172
I
0.25
0.25
0.25
(A)
FSM
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
3
9
1
1
1
1
1
1
2
2
2
Discrete Power Products –
V
FM
(V)
1.1
1.1
1.1
1.1
1.2
1.1
1.1
1.1
1.4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max
(°C/W)
R
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
357
θJA
Diodes and Rectifiers
t
rr
(ns)
400
0.7
0.7
50
50
50
50
50
50
50
50
50
50
50
50
Max
–
–
–
6
4
4
1
4
6
4
4
4
6
4
4
4
6
4
4
4
4
I
RM
0.025
0.001
0.025
0.001
0.025
0.001
0.005
0.025
0.025
0.025
0.05
0.05
0.05
0.05
0.05
0.05
0.05
(µA)
2.5
0.1
0.1
0.1
0.1
0.1
0.1
2.5
0.3
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
5
1
Max