FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 166

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Zener Diodes (Continued)
1N957B
BZX55C6V8
BZX79C6V8
1N5236B
1N5997B
1N755A
1N958B
BZX55C7V5
BZX79C7V5
1N5237B
1N5998B
1N756A
1N959B
BZX55C8V2
BZX79C8V2
1N5238B
1N5239B
1N5999B
1N757A
1N960B
BZX55C9V1
BZX79C9V1
1N5240B
1N6000B
1N758A
1N961B
BZX55C10
BZX79C10
1N4698
1N5241B
1N6001B
1N962B
BZX55C11
BZX79C11
1N5242B
Products
V
Z
Voltage (V)
Nominal Zener
10.45
6.8
6.8
6.8
7.5
7.5
7.5
7.5
7.5
7.5
8.2
8.2
8.2
8.2
8.2
8.2
8.7
9.1
9.1
9.1
9.1
9.1
9.1
10
10
10
10
10
10
11
11
11
11
11
12
Dissipation (W)
P
D
Total Device
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-161
Discrete Power Products –
Maximum Z
Bold = New Products (introduced January 2003 or later)
4.5
5.5
6.5
7.5
8.5
9.5
10
10
10
10
10
17
15
17
15
15
22
18
20
20
30
8
8
6
7
6
7
7
8
7
8
7
7
8
–
Z
(Ω)
Diodes and Rectifiers