FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 152
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
- Current page: 152 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Transient Voltage Suppressors (Continued)
SA24CA
P6KE30A
P6KE30CA
SA26A
SA26CA
SA28A
SA28CA
P6KE33A
P6KE33CA
SA30A
SA30CA
P6KE36A
P6KE36CA
SA33A
SA33CA
P6KE39A
P6KE39CA
SA36A
SA36CA
P6KE43A
P6KE43CA
SA40A
SA40CA
P6KE47A
P6KE47CA
SA43A
SA43CA
P6KE51A
P6KE51CA
SA45A
SA45CA
P6KE56A
P6KE56CA
SA48A
SA48CA
Products
Voltage (V)
Stand-off
Reverse
V
25.6
25.6
28.2
28.2
30.8
30.8
33.3
33.3
36.8
36.8
40.2
40.2
43.6
43.6
47.8
47.8
RWM
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
45
45
48
48
V
Min
26.7
28.5
28.5
28.9
28.9
31.1
31.1
31.4
31.4
33.3
33.3
34.2
34.2
36.7
36.7
37.1
37.1
40.9
40.9
44.4
44.4
44.7
44.7
47.8
47.8
48.5
48.5
53.2
53.2
53.3
53.3
10
40
50
50
BR
Voltage (V)
Breakdown
Max
29.5
31.5
31.5
31.9
31.9
34.4
34.4
34.7
34.7
36.8
36.8
37.8
37.8
40.6
40.6
44.2
44.2
45.2
45.2
49.1
49.1
49.4
49.4
52.8
52.8
53.6
53.6
55.3
55.3
58.8
58.8
58.9
58.9
41
41
Condition
I
T
Test
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Voltage @ I
Max Clamping
2-147
38.9
41.4
41.4
42.1
42.1
45.4
45.4
45.7
45.7
48.4
48.4
49.9
49.9
53.3
53.3
53.9
53.9
58.1
58.1
59.3
59.3
64.5
64.5
64.8
64.8
69.4
69.4
70.1
70.1
72.7
72.7
77.4
77.4
V
77
77
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
12.8
14.5
14.5
11.9
11.9
13.2
13.2
10.3
10.3
11.2
11.2
10.1
10.1
PPM
9.4
8.6
7.8
9.3
7.2
8.6
6.9
7.8
6.5
9.4
8.6
7.8
9.3
7.2
8.6
6.9
7.8
6.5
11
11
12
12
Leakage @ V
I
R
Max Reverse
(µA)
1
5
5
1
1
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
5
5
1
1
RWM
Diodes and Rectifiers
P
PPM
500
600
600
500
500
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
600
600
500
500
(W)
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Unidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Bidirectional
Direction
Related parts for FQI12N60CTU
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: