FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 178

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Small Signal Diodes (Continued)
MMBD1401
MMBD1501A
BAS21
MMBD1401A
Products
Configuration
Single
Single
Single
Single
V
200
200
250
250
(V)
RRM
I
F (AV)
(A)
0.6
0.6
0.6
0.6
2-173
I
(A)
FSM
1
1
1
1
Discrete Power Products –
V
FM
(V)
1.1
1
1
1
Max
(°C/W)
R
357
357
357
357
θJA
Diodes and Rectifiers
t
rr
(ns)
50
50
50
Max
–
I
RM
0.001
(µA)
0.1
0.1
0.1
Max