FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 185

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Ignition IGBTs
TO-220
ISL9V2040P3
HGTP14N36G3VL
HGTP14N40F3VL
ISL9V3036P3
ISL9V3040P3
HGTP14N37G3VL
HGTP20N35G3VL
ISL9V5036P3
TO-252(DPAK)
ISL9V2040D3S
ISL9V3036D3S
ISL9V3040D3S
TO-262(I
ISL9V5036S3
TO-263(D
ISL9V2040S3S
HGT1S14N36G3VLS
HGTP14N40F3VL
ISL9V3036S3S
ISL9V3040S3S
HGT1S14N37G3VLS
HGT1S20N35G3VLS
HGT1S20N36G3VLS
ISL9V5036S3S
Products
2
2
PAK)
PAK)
Min (V)
BV
390
330
350
330
390
320
320
360
390
330
390
360
390
330
350
330
390
320
320
345
360
CES
I
C
@ 100°C
10
14
14
17
17
18
20
31
10
17
17
31
10
14
14
17
17
18
20
26
31
Typ (V)
1.45
1.45
1.45
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.6
1.3
1.6
2-180
2
2
V
CE(sat)
Typ (V)
Test Condition
10A, 4.5V
10A, 4.5V
10A, 4.5V
6A, 4.5V
6A, 4.5V
6A, 4.5V
14A, 5V
14A, 5V
20A, 5V
10A, 4V
10A, 4V
14A, 5V
14A, 5V
20A, 5V
10A, 4V
6A, 4V
6A, 4V
6A, 4V
6A, 4V
6A, 4V
6A, 4V
Discrete Power Products –
t
f
Typ (µs)
2360
2800
2800
2800
2360
2800
2800
2800
2360
2800
2800
2800
–
–
–
–
–
–
–
–
–
Clamping Voltage Typ (V)
420
380
385
360
400
350
350
360
420
360
400
360
420
380
385
360
400
350
350
360
360
IGBTs