FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 204

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
STEALTH
ISL 9
R
TM
15 60
(Continued)
Rectifier
G2
P2: TO-220 (2 Lead)
G2: TO-247 (2 Lead)
G3: TO-247 (3 Lead)
S3: TO-263 (D
D3: TO-251/252 (DPAK) (2 Lead)
i.e., (600, 1200)
R: Rectifier
K: Common Cathode
Package
Voltage Breakdown/10
Current Rating
Configuration
Discrete Power
Fairchild
2
PAK)
8-11
5A3: TO-247ST
IY3: TO-264
IN4: SOT-227
P3: TO-220 (3 Lead)
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