FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 52

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-262 (I
FQI13N10
FQI13N10L
IRFI520A
FQI7N10
FQI7N10L
IRFI510A
FQI32N12V2
FDI2532
FQI28N15
FQI16N15
FQI9N15
FQI6N15
FQI5N15
IRLI630A
IRLI620A
IRLI610A
FQI34N20
FQI32N20C
IRFI650B
FQI19N20L
FQI19N20
FQI19N20C
IRFI640B
FQI12N20L
FQI10N20C
FQI10N20L
IRFI630B
FQI7N20
FQI7N20L
IRFI620B
FQI5N20
FQI5N20L
FQI4N20L
FQI4N20
IRFI610B
FQI27N25
IRFI654B
IRFI644B
IRFI634B
Products
2
PAK) (Continued)
Min. (V)
BV
100
100
100
100
100
100
120
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.075
0.082
0.085
10V
0.18
0.18
0.35
0.35
0.05
0.09
0.16
0.14
0.15
0.17
0.18
0.28
0.36
0.36
0.69
0.75
1.35
0.11
0.14
0.28
0.45
0.2
0.4
0.4
0.6
0.8
0.4
0.8
1.2
1.2
1.4
1.5
–
–
–
R
DS(ON)
0.024@6V
0.38@5V
0.15@5V
0.32@5V
0.38@5V
0.78@5V
1.25@5V
0.2@5V
0.4@5V
0.8@5V
1.5@5V
1.4@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-47
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
18.6
10.3
82.5
40.5
GS
8.7
5.8
4.6
8.5
6.5
5.4
6.1
6.8
4.8
7.2
12
16
41
86
40
23
10
60
95
27
31
45
16
20
13
22
12
50
95
47
29
8
6
4
5
= 5V
I
D
12.8
12.8
16.4
19.4
11.6
25.5
9.2
7.3
7.3
5.6
6.4
5.4
3.3
9.5
6.6
6.5
4.5
4.5
3.8
3.6
3.3
8.1
32
79
28
31
28
28
21
19
18
10
15
14
9
9
5
9
5
(A)
MOSFETs
P
D
150
310
168
108
180
156
156
140
140
139
139
180
156
139
65
65
45
40
40
33
75
63
54
69
39
33
90
72
87
72
63
63
47
52
52
45
45
38
74
(W)