FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 52
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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www.fairchildsemi.com
TO-262 (I
FQI13N10
FQI13N10L
IRFI520A
FQI7N10
FQI7N10L
IRFI510A
FQI32N12V2
FDI2532
FQI28N15
FQI16N15
FQI9N15
FQI6N15
FQI5N15
IRLI630A
IRLI620A
IRLI610A
FQI34N20
FQI32N20C
IRFI650B
FQI19N20L
FQI19N20
FQI19N20C
IRFI640B
FQI12N20L
FQI10N20C
FQI10N20L
IRFI630B
FQI7N20
FQI7N20L
IRFI620B
FQI5N20
FQI5N20L
FQI4N20L
FQI4N20
IRFI610B
FQI27N25
IRFI654B
IRFI644B
IRFI634B
Products
2
PAK) (Continued)
Min. (V)
BV
100
100
100
100
100
100
120
150
150
150
150
150
150
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
200
250
250
250
250
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.075
0.082
0.085
10V
0.18
0.18
0.35
0.35
0.05
0.09
0.16
0.14
0.15
0.17
0.18
0.28
0.36
0.36
0.69
0.75
1.35
0.11
0.14
0.28
0.45
0.2
0.4
0.4
0.6
0.8
0.4
0.8
1.2
1.2
1.4
1.5
–
–
–
R
DS(ON)
0.024@6V
0.38@5V
0.15@5V
0.32@5V
0.38@5V
0.78@5V
1.25@5V
0.2@5V
0.4@5V
0.8@5V
1.5@5V
1.4@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-47
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
18.6
10.3
82.5
40.5
GS
8.7
5.8
4.6
8.5
6.5
5.4
6.1
6.8
4.8
7.2
12
16
41
86
40
23
10
60
95
27
31
45
16
20
13
22
12
50
95
47
29
8
6
4
5
= 5V
I
D
12.8
12.8
16.4
19.4
11.6
25.5
9.2
7.3
7.3
5.6
6.4
5.4
3.3
9.5
6.6
6.5
4.5
4.5
3.8
3.6
3.3
8.1
32
79
28
31
28
28
21
19
18
10
15
14
9
9
5
9
5
(A)
MOSFETs
P
D
150
310
168
108
180
156
156
140
140
139
139
180
156
139
65
65
45
40
40
33
75
63
54
69
39
33
90
72
87
72
63
63
47
52
52
45
45
38
74
(W)
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