FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 125

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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JFETs (Continued)
BF244C
BF245C
2N5639
PN4391
2N5638
BF246A
J113
J112
J111
J201
PF5102
PN4117
PN4117A
PF5103
PN4118
J202
PN4093
PN4119
PN4092
U1898
PN4091
U1897
KSK30
TO-92 P-Channel
2N3820
J270
J177
J176
J271
P1087
J175
P1086
J174
2N5460
Products
BV
(V)
30
30
30
30
30
30
35
35
35
40
40
40
40
40
40
40
40
40
40
40
40
40
50
20
30
30
30
30
30
30
30
30
40
GDS
Dissipation
Power
(mW)
350
350
625
625
625
625
625
625
625
625
625
350
350
625
350
625
625
350
625
625
625
625
100
350
350
350
350
350
350
350
350
350
350
P
D
Min (V)
0.75
0.5
0.5
0.6
0.5
0.3
0.7
0.6
0.6
1.2
0.8
0.4
0.5
0.8
1.5
–
–
3
1
1
2
5
–
–
3
–
5
4
1
2
2
5
1
Typ (V) Max (V) @ I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
14.5
GS
1.5
1.6
1.8
1.8
2.7
2.5
4.5
10
12
10
10
10
10
10
8
8
8
3
5
3
4
5
6
7
7
5
8
2
4
5
6
6
(off)
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
0.1
–
–
1
1
1
1
1
1
(µA) @ V
2-120
Discrete Power Products –
15
15
20
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
15
15
15
15
15
DS
–
–
5
5
5
(V) Min (mA) Max (mA) @V
0.03
0.03
0.08
0.2
0.9
0.2
0.3
0.3
1.5
12
12
25
50
50
30
20
10
15
15
30
30
10
20
2
5
4
8
2
2
6
5
7
1
0.09
0.09
0.24
150
100
I
4.5
0.6
6.5
25
25
80
20
40
15
15
20
25
50
60
DSS
–
–
–
–
–
–
–
–
–
–
–
–
1
5
DS
15
15
20
20
20
15
15
15
15
20
15
10
10
15
10
20
20
10
20
20
20
20
10
10
15
15
15
15
20
15
20
15
15
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
0.07
0.07
0.08
3.5
7.5
0.1
0.8
–
3
–
–
–
8
–
–
–
–
–
–
–
–
–
–
–
6
–
–
8
–
–
–
–
1
GFS
0.21
0.21
0.25
0.33
6.5
15
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
5
4
100
300
150
125
R
(Ω)
250
60
30
30
50
30
80
50
50
30
30
75
85
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
DS
I
0.0001
0.0002
0.0002
0.0002
0.001
0.001
0.001
0.001
0.001
D
(µA)
0.01
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–