FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 139

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SB3100
SB330
SB340
SB350
SB360
SB380
SB5100
SB520
SB530
SB540
SB550
SB560
SB580
1N5817
1N5818
1N5819
SB1100
SB120
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SS14
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Schottky Barrier Rectifier
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Schottky Barrier Rectifier
Schottky Barrier Rectifier
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Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
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Function
–
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
I
150
150
150
150
150
150
150
(A)
FSM
80
80
80
80
80
80
80
80
80
25
25
25
30
30
30
30
30
30
30
30
30
40
40
40
40
2-134
(°C/W)
R
28
28
28
40
40
40
40
40
40
25
25
25
25
25
25
25
80
80
80
80
80
80
80
80
80
80
88
88
88
88
θJA
–
–
Discrete Power Products –
V
100
100
100
100
RRM
(V)
20
30
40
30
40
50
60
80
20
30
40
50
60
80
20
30
40
20
30
40
50
60
80
30
40
20
30
40
I
F (AV)
(A)
3
3
3
3
3
3
3
3
3
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
Diodes and Rectifiers
FM
0.475
0.525
0.85
0.74
0.74
0.85
0.55
0.55
0.55
0.67
0.67
0.85
0.45
0.55
0.85
0.85
0.41
0.85
(V)
0.5
0.5
0.5
0.7
0.5
0.5
0.5
0.6
0.5
0.5
0.7
0.6
0.5
0.5
Max
(µA) @V
1000
1000
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
500
200
200
200
200
I
RM
Max
100
100
100
100
20
30
40
30
40
50
60
80
20
30
40
50
60
80
20
30
40
20
30
40
50
60
80
30
40
20
30
40
R
(V)