FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 50

MOSFET N-CH 300V 1.95A TO-220F

FQPF3N30

Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF3N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
www.fairchildsemi.com
TO-220 (Continued)
FQP12P10
SFP9530
FQP8P10
SFP9520
FQP5P10
SFP9510
FQP47P06
FQP27P06
FQP17P06
SFP9Z34
FQP11P06
SFP9Z24
SFP2955
FQP7P06
SFP9Z14
NDP6020P
FDP4020P
Products
Min. (V)
BV
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
0.175
10V
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
0.3
0.6
1.2
0.3
0.5
R
4.5V
DS(ON)
0.05
0.08
Max (Ω) @ V
2-45
0.075-10.07@2.7V
2.5V
0.11
GS
=
1.8V
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
9.5
21
30
12
16
84
33
21
30
13
15
15
25
9
9
= 5V
I
D
11.5
10.5
11.4
4.5
3.6
9.7
9.4
6.7
6.7
47
27
17
18
24
16
8
6
(A)
MOSFETs
P
D
37.5
160
120
66
49
32
82
49
45
60
75
65
40
79
53
49
38
(W)

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