FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 13

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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MicroFET™
FDM3300NZ
FDM606P
MicroFET N-Channel
MicroFET P-Channel
Products
Min. (V)
BV
-20
20
DSS
Dual Common Drain
Config.
Single
10V
–
–
R
DS(ON)
0.023
0.026
4.5V
Max (Ω) @ V
2-8
0.028
0.033
2.5V
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
0.052
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
12
20
= 5V
I
D
6.8
10
(A)
MOSFETs
P
D
1.92
2.5
(W)