FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 175

• Manufacturer Part Number: FQPF3N30
• Description: MOSFET N-CH 300V 1.95A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF3N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 980mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 1.95A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 10V
• Input Capacitance (ciss) @ Vds: 230pF @ 25V
• Power - Max: 20W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.95 A
• Power Dissipation: 20 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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FJH1101
1N456A
FJH1100
FJH1102
FDH700
1N4154
1N4152
BAY71
1N457
1N457A
1N4305
FDH600
1N3064
1N4151
BAW62
1N4150
1N4454
BAW76
1N4148
1N4446
1N4448
1N914
1N914A
1N914B
1N916
1N916A
1N916B
1N4149
BAV19
BAY72
BAY73
1N3595
1N458A
FDH300
FDH300A
DO-35
Products
Configuration
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
V
100
100
100
100
100
100
100
100
100
100
120
125
125
150
150
150
150
(V)
20
30
30
30
30
35
40
50
70
70
75
75
75
75
75
75
75
85
RRM
I
0.15
0.15
0.15
0.15
F (AV)
(A)
0.5
0.3
0.2
0.3
0.5
0.5
0.3
0.2
0.3
0.3
0.3
0.4
0.4
0.3
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.3
0.5
0.5
0.5
0.2
0.5
0.5
0.5
2-170
I
(A)
FSM
1
1
1
1
1
1
4
4
1
1
4
1
4
4
4
1
1
4
1
1
1
1
1
1
1
1
1
1
1
4
1
2
1
1
1
Discrete Power Products –
V
FM
1.05
1.25
0.85
(V)
1.1
1.1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Max
(°C/W)
R
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
350
300
300
300
300
300
θJA
Diodes and Rectifiers
t
rr
1000
3000
(ns)
40
50
50
Max
–
–
–
–
–
–
–
–
–
9
2
4
2
2
4
4
2
4
4
2
4
4
4
4
4
4
4
4
4
4
I
RM
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.025
0.005
0.025
0.001
0.001
0.05
0.05
0.05
(µA)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0
0
0
Max