FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 51
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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www.fairchildsemi.com
TO-262 (I
ISL9N302AS3S
ISL9N303AS3
RF1S70N03
HUF75345S3
HUFA75344S3
HUF75333S3
FDI038AN06A0
FQI50N06L
FQI50N06
FQI30N06L
RF1S25N06
FQI13N06L
FQI13N06
FDI047AN08A0
HUF75545S3
FQI90N08
FQI70N08
FQI44N08
FQI17N08L
FQI17N08
FQI9N08
FQI9N08L
IRLI540A
IRLI530A
IRLI520A
IRLI510A
FDI3632
FDI3652
FQI70N10
HUF75639S3
FQI44N10
IRFI550A
FQI33N10
IRFI540A
FQI33N10L
FQI19N10
FQI19N10L
IRFI530A
TO-262(I
Products
2
PAK) N-Channel
2
PAK)
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
30
30
30
55
55
55
60
60
60
60
60
60
60
75
80
80
80
80
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0023
0.0032
0.0038
0.0047
0.007
0.008
0.016
0.021
0.022
0.035
0.047
0.135
0.016
0.017
0.034
0.115
0.009
0.016
0.025
0.025
0.039
0.052
0.052
0.052
10V
0.11
0.01
0.21
0.21
0.04
0.11
0.1
0.1
0.1
–
–
–
–
R
DS(ON)
0.0074@6V
0.0087@6V
0.025@5V
0.045@5V
0.115@5V
0.058@5V
0.015@6V
0.026@6V
0.055@5V
0.14@5V
0.23@5V
0.12@5V
0.22@5V
0.44@5V
0.11@5V
0.0033
0.005
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-46
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by FQI95N03L
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
24.5
38.4
16.9
10.2
110
125
105
4.8
5.8
8.8
5.9
4.7
5.5
61
90
40
95
31
15
35
92
84
75
38
12
84
41
85
57
48
75
38
60
30
19
14
27
= 5V
I
D
13.6
16.5
16.5
43.5
9.3
9.3
9.2
5.6
75
75
75
75
66
80
52
50
32
25
13
80
75
71
70
44
28
14
80
61
57
56
40
33
28
33
19
19
14
(A)
MOSFETs
P
D
345
215
325
285
150
310
121
120
310
270
160
155
127
121
310
150
160
200
146
167
127
107
127
79
72
45
45
65
65
40
40
62
49
37
75
75
55
(W)
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