FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 126
![MOSFET N-CH 300V 1.95A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF3N30
Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF4N25.pdf
(214 pages)
Specifications of FQPF3N30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
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JFETs (Continued)
2N5461
2N5462
TO-92S N-Channel
KSK596
Products
BV
(V)
40
40
20
GDS
Dissipation
Power
(mW)
350
350
100
P
D
Min (V)
1.8
–
1
Typ (V) Max (V) @ I
0.6
–
–
V
GS
7.5
1.5
9
(off)
D
1
1
1
(µA) @ V
2-121
Discrete Power Products –
15
15
DS
5
(V) Min (mA) Max (mA) @V
0.1
2
4
0.35
I
16
DSS
9
15
15
DS
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
1.5
–
2
GFS
5
6
–
R
(Ω)
–
–
–
DS
I
D
(µA)
(off)
–
–
–
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