FQPF3N30 Fairchild Semiconductor, FQPF3N30 Datasheet - Page 26

MOSFET N-CH 300V 1.95A TO-220F

FQPF3N30

Manufacturer Part Number
FQPF3N30
Description
MOSFET N-CH 300V 1.95A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF3N30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 980mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
1.95A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 10V
Input Capacitance (ciss) @ Vds
230pF @ 25V
Power - Max
20W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.95 A
Power Dissipation
20 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF3N30
Manufacturer:
FAIRCHILD
Quantity:
12 500
www.fairchildsemi.com
SOT-223
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SOT-223 N-Channel
SOT-223 P-Channel
Products
Min. (V)
BV
-250
-250
-200
-200
-100
-100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
250
250
450
-60
30
30
30
30
30
55
55
55
55
60
60
60
60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.028
0.035
0.035
10V
0.06
0.07
0.07
0.09
0.09
0.11
0.14
0.12
0.35
0.35
1.35
1.75
4.25
1.05
0.1
0.1
0.2
0.4
0.8
1.4
1.5
2.7
1.2
0.3
2
2
4
4
3
R
DS(ON)
0.14@5V
0.22@5V
0.44@5V
0.13@6V
0.38@5V
0.8@5V
1.5@5V
1.4@5V
0.045
0.042
0.055
4.5V
0.05
0.09
0.12
2.5
0.5
Max (Ω) @ V
2-21
0.058
2.5V
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
Discrete Power Products –
Q
@V
g
Typ. (nC)
10.7
10.7
10.7
10.2
2.36
10.3
GS
4.2
8.3
4.8
5.8
5.5
5.8
4.6
8.5
6.1
7.2
4.3
8.1
6.5
6.5
6.3
28
19
12
14
13
14
16
12
11
9
4
5
9
6
9
9
= 5V
I
D
1.13
0.77
0.85
0.85
0.77
0.83
0.64
0.55
0.45
0.67
6.3
7.2
6.5
2.6
2.6
2.8
2.8
2.3
1.5
3.7
2.3
1.7
1.7
1.5
0.4
1.1
0.5
0.5
2.5
8
5
3
3
4
4
1
1
(A)
MOSFETs
P
D
1.13
1.1
1.1
1.1
1.1
2.1
2.1
2.7
2.2
2.4
1.8
2.4
2.2
2.2
2.5
2.1
0.9
2.5
1.6
2.5
1.6
2.5
3
3
3
3
3
3
3
3
2
2
2
2
2
2
3
(W)

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