PIC16F785-E/SS Microchip Technology, PIC16F785-E/SS Datasheet - Page 143

20 PIN, 3.5 KB STD FLASH, 128 RAM, 18 I/O PB FREE,

PIC16F785-E/SS

Manufacturer Part Number
PIC16F785-E/SS
Description
20 PIN, 3.5 KB STD FLASH, 128 RAM, 18 I/O PB FREE,
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F785-E/SS

Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
17
Program Memory Size
3.5KB (2K x 14)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 14x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT20SS1-1 - SOCKET TRANSITION 20DIP 20SSOPAC162060 - HEADER INTRFC MPLAB ICD2 20PIN
Connectivity
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
19.0
Absolute Maximum Ratings
Ambient temperature under bias................................................................................................................. -40 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ........................................................................................................-0.3 to +13.5V
Voltage on RB6 open-drain pin with respect to Vss .....................................................................................-0.3 to +8.5V
Voltage on all other pins with respect to V
Total power dissipation
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA, PORTB, and PORTC (combined) .................................................................200 mA
Maximum current sourced PORTA, PORTB, and PORTC (combined).................................................................200 mA
Note 1:
© 2008 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
ELECTRICAL SPECIFICATIONS
Power dissipation is calculated as follows: P
Voltage spikes below V
Thus, a series resistor of 50-100
pulling this pin directly to V
DD
with respect to V
IK
(1)
(1)
OK
(V
DD
(PDIP and SOIC).........................................................................................................800 mW
(SSOP) ........................................................................................................................600 mW
I
SS
(Vo < 0 or Vo >V
< 0 or V
pin ..............................................................................................................................250 mA
pin ...........................................................................................................................300 mA
(†)
SS
I
SS
> V
............................................................................................................ -0.3 to +6.5V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
DD
.
SS
)...................................................................................................................... ±20 mA
DD
Ω
................................................................................. -0.3V to (V
)................................................................................................................ ±20 mA
should be used when applying a “low” level to the MCLR pin, rather than
DIS
= V
DD
x {I
DD
– ∑ I
PIC16F785/HV785
OH
} + ∑ {(V
DD
– V
OH
) x I
DS41249E-page 141
OH
} + ∑(V
DD
O
+ 0.3V)
l x I
OL
).

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