MC711P2CFNE3 Freescale Semiconductor, MC711P2CFNE3 Datasheet - Page 68

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MC711P2CFNE3

Manufacturer Part Number
MC711P2CFNE3
Description
IC MCU 8BIT 84-PLCC
Manufacturer
Freescale Semiconductor
Series
HC11r
Datasheet

Specifications of MC711P2CFNE3

Core Processor
HC11
Core Size
8-Bit
Speed
3MHz
Connectivity
MI Bus, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
50
Program Memory Size
32KB (32K x 8)
Program Memory Type
OTP
Eeprom Size
640 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
84-PLCC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC711P2CFNE3
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Operating Modes and On-Chip Memory
3.6.2.2 EEPROM bulk erase
Technical Data
EELAT — EEPROM latch control
EEPGM — EEPROM program command
PROG
To erase the EEPROM, ensure that the proper bits of the BPROT
register are cleared, then complete the following steps using the PPROG
register:
1. Write to PPROG with the ERASE, EELAT and appropriate BYTE
2. Write to the appropriate EEPROM address with any data. Row
3. Write to PPROG with ERASE, EELAT, EEPGM and the
Freescale Semiconductor, Inc.
When the EELAT bit is cleared, the EEPROM can be read as if it were
a ROM. The block protect register has no effect during reads.
During EEPROM programming, the ROW and BYTE bits of PPROG
are not used. If the frequency of the E clock is 1MHz or less, set the
CSEL bit in the OPTION register. Remember that zeros must be
erased by a separate erase operation before programming. The
following example of how to program an EEPROM byte assumes that
the appropriate bits in BPROT have been cleared.
For More Information On This Product,
1 = EEPROM address and data bus set up for programming or
0 = EEPROM address and data bus set up for normal reads.
1 = Program or erase voltage switched on to EEPROM array.
0 = Program or erase voltage switched off to EEPROM array.
and ROW bits set.
erase only requires a write to any location in the row. Bulk erase
is accomplished by writing to any location in the array.
appropriate BYTE and ROW bits set.
Operating Modes and On-Chip Memory
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
erasing.
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$103B
$0D80
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EELAT=1
Set EELAT bit
Store data to EEPROM address
EELAT=EEPGM=1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set to READ mode
MC68HC11P2 — Rev 1.0

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