HD64F2134FA20 Renesas Electronics America, HD64F2134FA20 Datasheet - Page 813
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HD64F2134FA20
Manufacturer Part Number
HD64F2134FA20
Description
IC H8S MCU FLASH 128K 80QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Specifications of HD64F2134FA20
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
IrDA, SCI
Peripherals
POR, PWM, WDT
Number Of I /o
58
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
80-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
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Manufacturer
Quantity
Price
Company:
Part Number:
HD64F2134FA20
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
HD64F2134FA20V
Manufacturer:
RENESAS
Quantity:
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Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
3. Block erase time (shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (tP (max))
5. Maximum programming count (N) should be set according to the actual set value of (z1,
6. Maximum erase time (tE (max))
7. Maximum erase count (N) should be set according to the actual setting (z) to allow
8. Minimum number of times for which all characteristics are guaranteed after rewriting
9. Reference value for 25 C (as a guideline, rewriting should normally function up to this
10. Data retention characteristic when rewriting is performed within the specification range,
The number of times for writing n
1
7
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
not include the erase verification time.)
tP (max) = (wait time after P-bit setting (z1) + (z3))
z2, z3) to allow programming within the maximum programming time (tP (max)). The
wait time after P-bit setting (z1, z2, z3) must be changed with the value of the number
of writing times (n) as follows.
tE (max) = Waiting time after E-bit setting (z)
erase within the maximum erase time (tE (max)).
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
((N) – 6)
n
n
6
1000
z1 = 30 µs, z3 = 10 µs
z2 = 200 µs
Rev. 4.00 Jun 06, 2006 page 757 of 1004
Maximum erase count (N).
Section 25 Electrical Characteristics
6 + wait time after P-bit setting (z2)
REJ09B0301-0400
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