MC908AZ60ACFU Freescale Semiconductor, MC908AZ60ACFU Datasheet - Page 382
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MC908AZ60ACFU
Manufacturer Part Number
MC908AZ60ACFU
Description
IC MCU FLASH 8.4MHZ 60K 64QFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet
1.MC908AZ60ACFUER.pdf
(414 pages)
Specifications of MC908AZ60ACFU
Core Processor
HC08
Core Size
8-Bit
Speed
8.4MHz
Connectivity
CAN, SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
52
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 15x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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MC68HC908AS60 and MC68HC908AZ60
A.1.2.5 FLASH Block Protection
The FLASH block protect registers are now 8-bit registers in place of 4-bit protecting array ranges that
can be incremented by as little as 1 page (128 bytes) at a time as opposed to 8 Kbytes at a time on
previous MCUs. Users making use of the block protect feature must change their block protect register.
A further significant change is that high voltage (V
) is no longer needed on the IRQ pin to program or
HI
erase the FLASH block protect registers.
A.1.2.6 FLASH Endurance
The FLASH endurance is now specified as 10,000 write / erase cycles as opposed to less than 1000
before.
A.1.3 EEPROM
A.1.3.1 EEPROM Architecture
Like the FLASH, EEPROM-1 and EEPROM-2 are also made from a new NVM technology. However,
unlike the FLASH, the bit polarity remains the same i.e. programmed=0, erased=1. The architecture and
basic programming and erase operations are unchanged.
A.1.3.2 EEPROM Clock Source and Prescaler
The first major difference on the new EEPROM is that it requires a constant time base source to ensure
secure programming and erase operations. This is done by firstly selecting which clock source is going
to drive the EEDIVG clock divider input using a new bit 7 introduced onto the CONFIG-2 register $FE09.
Next the divide ratio from this source has to be set by programming an 11-bit time base pre-scalar into
bits spread over two new registers, EEDIVxH and EEDIVxL (where x=1 or 2 for EEPROM-1 or
EEPROM-2 arrays).
The EEDIVxH and EEDIVxL registers are volatile. However, they are loaded upon reset by the contents
of duplicate nonvolatile EEDIVxHNVR and EEDIVxLNVR registers much in the same way as the array
control registers (EEACRx) interact with the nonvolatile registers (EENVRx) for configuration control on
the existing revision. As a result of the new EEDIV clock described above bit 7 (EEBCLK) of the EEPROM
control registers (EECRx) is no longer used.
A.1.3.3 EEPROM AUTO Programming & Erasing
The second major change to the EEPROM is the inclusion in the EEPROM control registers (EECRx) of
an AUTO function using previously unused bit 1 of these registers.
The AUTO function enables the logic of the MCU to automatically use the optimum programming or
erasing time for the EEPROM. If using AUTO the user does not need to wait for the normal minimum
specified programming or erasing time. After setting the EEPGM bit as normal the user just has to poll
that bit again, waiting for the MCU to clear it indicating that programming or erasing is complete.
MC68HC908AZ60A • MC68HC908AS60A • MC68HC908AS60E Data Sheet, Rev. 6
382
Freescale Semiconductor
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