PIC16C782/JW Microchip Technology, PIC16C782/JW Datasheet - Page 149

IC MCU EPROM 2KX14 COMP 20CDIP

PIC16C782/JW

Manufacturer Part Number
PIC16C782/JW
Description
IC MCU EPROM 2KX14 COMP 20CDIP
Manufacturer
Microchip Technology
Series
PIC® 16Cr

Specifications of PIC16C782/JW

Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
13
Program Memory Size
3.5KB (2K x 14)
Program Memory Type
EPROM, UV
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 8x8b; D/A 1x8b
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Package / Case
20-CDIP (0.300", 7.62mm) Window
For Use With
DVA16XP202 - ADAPTER DEVICE PIC16C781/782DM163012 - BOARD DEMO PICDEM FOR 16C781/782AC164028 - MODULE SKT PROMATEII 20SOIC/DIP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Connectivity
-
Other names
Q1137459

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC16C782/JW
Manufacturer:
AD
Quantity:
580
17.0
Absolute Maximum Ratings †
Ambient temperature under bias....................................................................................................... -55°C to +125°C
Storage temperature ......................................................................................................................... -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Maximum voltage between AV
Maximum voltage between AV
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss ...................................................................................................0.3 V to +10.5 V
Total power dissipation
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA and PORTB (combined)........................................................................... 200 mA
Maximum current sourced by PORTA and PORTB (combined....................................................................... 200 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: P
2001 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS
DD
with respect to V
IK
(1)
(1)
OK
(V
DD
(PDIP, SOIC)............................................................................................................. 1.0 W
(SSOP) .................................................................................................................... 0.65 W
SS
I
(V
< 0 or V
pin ........................................................................................................................ 250 mA
O
pin ..................................................................................................................... 300 mA
DD
SS
< 0 or V
SS
and V
and V
I
SS
.......................................................................................................-0.3 to +7.5 V
SS
> V
................................................................................................ -0.3 V to +8.5 V
O
(except V
SS
DD
DD
> V
pins ............................................................................................... ± 0.3 V
.................................................................................................... ± 20 mA
pins............................................................................................... ± 0.3 V
DD
............................................................................................. ± 20 mA
DD
Preliminary
, MCLR and RA4) ................................... -0.3V to (V
DIS
= V
DD
x {I
DD
-
I
OH
} +
PIC16C781/782
{(V
DD
- V
OH
) x I
DS41171A-page 147
OH
} + (V
DD
+ 0.3 V)
OL
x I
OL
).

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