DF3048X16V Renesas Electronics America, DF3048X16V Datasheet - Page 653

• Manufacturer Part Number: DF3048X16V
• Description: MCU 5V 128K,PB-FREE 100-TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of DF3048X16V

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 16MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

mode, even by setting the P bit or E bit in FLMCR again. The PV and EV bits in FLMCR remain
valid, however. Transitions to verify modes are possible in the error-protect state.
The error-protect state can be cleared only by a reset or entry to hardware standby mode.
Note: * It is possible to write to these registers. Note that a transition to software standby mode
The purpose of error-protect mode is to prevent overprogramming or overerasing damage to flash
memory by detecting abnormal conditions that occur if the programming or erasing algorithm is
not followed, or if a program crashes while the flash memory is being programmed or erased.
This protection function does not cover abnormal conditions other than the setting conditions of
the flash memory error bit (FLER), however. Also, if too much time elapses before the error-
protect state is reached, the flash memory may already have been damaged. This function
accordingly does not offer foolproof protection from damage to flash memory.
To prevent abnormal operations, when programming voltage (V
programming and erasing algorithms correctly, and keep microcontroller operations under
Figure 19.13 Flash Memory State Transitions in Modes 5, 6, and 7 (On-Chip ROM
RD:
VF:
PR:
ER:
RD:
VF:
PR:
ER:
INIT.:
initializes these registers.
Memory read enabled
Verify read enabled
Programming enabled
Erase enabled
Memory read disabled
Verify read disabled
Programming disabled
Erase disabled
Initialized state of registers (FLMCR, EBR1, EBR2)
P = 1 or E = 1
Enabled) when Programming Voltage (V
Program mode
or erase mode
RD VF PR ER
Error occurs
FLER = 0
Section 19 Flash Memory (H8/3048F: Dual Power Supply (V
RD VF PR ER
or verify mode
Memory read
FLER = 0
P = 0 and E = 0
Error-protect mode
RD VF PR ER
FLER = 1
Error occurs
(software standby)
RES = 0 or
STBY = 0
RES = 1 and STBY = 1
and not software standby
RES = 0 or STBY = 0
or software standby
Software
standby
Software standby
cleared
Rev. 7.00 Sep 21, 2005 page 627 of 878
RES = 0 or
STBY = 0
Error-protect mode
(software standby)
PP
PP
RD VF PR ER
) is applied, follow the
) is Applied
FLER = 1
INIT.
RES = 0 or
STBY = 0
(hardware protect)
Reset or standby
RD VF PR ER
REJ09B0259-0700
FLER = 0
INIT.
PP
= 12 V))