DF2370RVFQ34V Renesas Electronics America, DF2370RVFQ34V Datasheet - Page 923
![IC H8S/2370 MCUFLSH 256K 144LQFP](/photos/12/41/124197/df2370rvfq34v_sml.jpg)
DF2370RVFQ34V
Manufacturer Part Number
DF2370RVFQ34V
Description
IC H8S/2370 MCUFLSH 256K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2370RVFQ34V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2370RVFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 923 of 1208
- Download datasheet (8Mb)
The FLMCR1, FLMCR2, EBR1, and EBR2 settings are retained, but program mode or erase
mode is forcibly aborted at the point at which the error occurred. Program mode or erase mode
cannot be re-entered by re-setting the P or E bit. However, since PV and EV bit setting is enabled,
and a transition can be made to verify mode. The error protection state can be canceled by a reset
or in hardware standby mode.
20.9
In programmer mode, a PROM programmer can perform programming/erasing via a socket
adapter, just like for a discrete flash memory. Use a PROM programmer which supports the
Renesas 512-kbyte flash memory on-chip MCU device type (FZTAT512V3A). A 12-MHz input
clock is needed.
20.10
In user mode, the flash memory will operate in either of the following states:
• Normal operating mode
• Standby mode
Table 20.7 shows the correspondence between the operating modes of this LSI and the flash
memory. When the flash memory returns to normal operation from a standby state, a power
supply circuit stabilization period is needed. When the flash memory returns to its normal
operating state, bits STS3 to STS0 in SBYCR must be set to provide a wait time of at least 100 µs,
even when the external clock is being used.
Table 20.7 Flash Memory Operating States
Operating Mode
Active mode
Sleep mode
Standby mode
The flash memory can be read.
All flash memory circuits are halted.
Programmer Mode
Power-Down States for Flash Memory
Section 20 Flash Memory (0.35-μm F-ZTAT Version)
Flash Memory Operating State
Normal operating state
Normal operating state
Standby state
Rev.7.00 Mar. 18, 2009 page 855 of 1136
REJ09B0109-0700
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