DF2370RVFQ34V Renesas Electronics America, DF2370RVFQ34V Datasheet - Page 295
![IC H8S/2370 MCUFLSH 256K 144LQFP](/photos/12/41/124197/df2370rvfq34v_sml.jpg)
DF2370RVFQ34V
Manufacturer Part Number
DF2370RVFQ34V
Description
IC H8S/2370 MCUFLSH 256K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.YR0K42378FC000BA.pdf
(1208 pages)
Specifications of DF2370RVFQ34V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
96
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
16K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DF2370RVFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
- Current page: 295 of 1208
- Download datasheet (8Mb)
Section 6 Bus Controller (BSC)
6.7.10
Bus Cycle Control in Write Cycle
By setting the SDWCD bit of the DRACCR to 1, the CAS latency control cycle (Tc1) that is
inserted by the WTCRB register in the write access of the synchronous DRAM can be disabled.
Disabling the CAS latency control cycle can reduce the write-access cycle count as compared to
synchronous DRAM read access. Figure 6.48 shows the write access timing when the CAS
latency control cycle is disabled.
T
T
T
T
p
r
c1
c2
φ
SDRAMφ
Address bus
Column address
Row address
Column address
Precharge-sel
Row address
RAS
CAS
WE
CKE
High
DQMU, DQML
Data bus
PALL
ACTV
NOP
WRIT
Figure 6.48 Example of Write Access Timing when CAS Latency Control Cycle Is Disabled
(SDWCD = 1)
Rev.7.00 Mar. 18, 2009 page 227 of 1136
REJ09B0109-0700
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