HD64F2145BTE20 Renesas Electronics America, HD64F2145BTE20 Datasheet - Page 779
HD64F2145BTE20
Manufacturer Part Number
HD64F2145BTE20
Description
IC H8S MCU FLASH 256K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Specifications of HD64F2145BTE20
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
74
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in FLMCR1
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
4. Maximum programming time (t
5. The maximun number of writes (N) should be set according to the actual set value of
6. Maximum erase time (t
7. The maximum number of erases (N) should be set according to the actual set value of z
8. Minimum number of times for which all characteristics are guaranteed after rewriting
9. Reference value for 25 C (as a guideline, rewriting should normally function up to this
10. Data retention characteristic when rewriting is performed within the specification range,
t
The wait time after P-bit setting (z1, z2, and z3) should be alternated according to the
1
t
is set. It does not include the programming verification time.)
not include the erase verification time.)
+ wait time after P-bit setting (z2)
z1, z2 and z3 to allow programming within the maximum programming time (t
number of writes (n) as follows:
7
to allow erasing within the maximum erase time (t
(Guarantee range is 1 to minimum value).
value).
including the minimum value.
P
E
(max) = (wait time after P-bit setting (z1) + (z3))
(max) = Wait time after E-bit setting (z)
n
n
6
1000
z1 = 30µs, z3 = 10µs
z2 = 200µs
E
(max))
P
(max))
((N) – 6)
maximum erase count (N)
Rev. 3.00 Mar 21, 2006 page 723 of 788
E
Section 27 Electrical Characteristics
(max)).
6
REJ09B0300-0300
P
(max)).
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