ST7FLITEUS5B6 STMicroelectronics, ST7FLITEUS5B6 Datasheet - Page 106

• Manufacturer Part Number: ST7FLITEUS5B6
• Description: MCU 8BIT 1KB FLASH 128KB 8-DIP
• Manufacturer: STMicroelectronics
• Series: ST7r

Specifications of ST7FLITEUS5B6

• Core Processor: ST7
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 5
• Program Memory Size: 1KB (1K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.4 V ~ 5.5 V
• Data Converters: A/D 5x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Controller Family/series: ST7
• No. Of I/o's: 5
• Ram Memory Size: 128Byte
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Rohs Compliant: Yes
• For Use With: 497-6403 - BOARD EVAL 8BIT MICRO + TDE1708497-6407 - BOARD EVAL FOR VACUUM CLEANER497-5861 - EVAL BRD POWER MOSFET/8PIN MCU497-5858 - EVAL BOARD PLAYBACK ST7FLITE497-5515 - EVAL BOARD PHASE CTRL DIMMER497-5049 - KIT STARTER RAISONANCE ST7FLITE497-5046 - KIT TOOL FOR ST7/UPSD/STR7 MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -
• Other names: 497-5636-5

Electrical characteristics
12.7.2
12.7.3
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Electromagnetic Interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 60.
1. Data based on characterization results, not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). One model
can be simulated: Human Body Model. This test conforms to the JESD22-A114A/A115A
standard.
Table 61.
1. Data based on characterization results, not tested in production.
Static and dynamic latchup
●
●
Symbol
V
Symbol
ESD(HBM)
S
EMI
LU: 3 complementary static tests are required on 10 parts to assess the latchup
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latchup standard. For more details,
refer to the application note AN1181.
DLU: Electrostatic discharges (one positive then one negative test) are applied to each
pin of 3 samples when the micro is running to assess the latchup performance in
Peak level
Electrostatic discharge voltage
(human body model)
EMI characteristics
Absolute maximum ratings
Parameter
Ratings
V
SO8 package,
conforming to SAE J
1752/3
DD
=5 V, T
(1)
Conditions
A
=+25 °C,
T
A
=+25°C
Conditions
0.1 MHz to
30 MHz
30 MHz to
130 MHz
130 MHz to
1 GHz
SAE EMI Level
frequency band
Monitored
ST7LITEUS2, ST7LITEUS5
[f
Max vs.
OSC
-/8 MHz
Maximum
value
> 4000
21
23
10
3
/f
CPU
(1)
]
dBμV
Unit
Unit
-
V