HD6417708SF60V Renesas Electronics America, HD6417708SF60V Datasheet - Page 233

IC SUPERH MPU ROMLESS 208LQFP

HD6417708SF60V

Manufacturer Part Number
HD6417708SF60V
Description
IC SUPERH MPU ROMLESS 208LQFP
Manufacturer
Renesas Electronics America
Series
SuperH® SH7700r
Datasheet

Specifications of HD6417708SF60V

Core Processor
SH-2
Core Size
32-Bit
Speed
60MHz
Connectivity
EBI/EMI, SCI, SmartCard
Peripherals
POR, WDT
Number Of I /o
8
Program Memory Type
ROMless
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
208-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Ram Size
-
Program Memory Size
-
Data Converters
-

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HD6417708SF60V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Part Number:
HD6417708SF60V
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Bit 1—Refresh Mode (RMODE): Selects whether to perform an ordinary refresh or a self-refresh
when the RFSH bit is 1. When the RFSH bit is 1 and this bit is 0, a CAS-before-RAS refresh or an
auto-refresh is performed on DRAM, synchronous DRAM or pseudo-SRAM at the period set by
the refresh-related registers RTCNT, RTCOR and RTCSR. When a refresh request occurs during
an external bus cycle, the bus cycle will be ended and the refresh cycle performed. When the
RFSH bit is 1 and this bit is also 1, the DRAM, synchronous DRAM or pseudo-SRAM will wait
for the end of any executing external bus cycle before going into a self-refresh. All refresh
requests to memory that is in the self-refresh state are ignored.
Bit 1: RMODE
0
1
Bit 0— Extended Data Out (EDOMODE): Specifies the timing of data sampling during data reads
when using DRAM in EDO mode. Operating timing of memory other than DRAM does not
change even if this bit is set. This bit is valid only for DRAM connected to area 3. Do not set this
bit to 1 when using synchronous DRAM or pseudo-SRAM.
Bit 0: EDOMODE
0
1
Description
CAS-before-RAS refresh (RFSH must be 1)
Self-refresh (RFSH must be 1)
Description
Set when using normal DRAM. Data is sampled during read cycle on the
falling edge of CKIO.
Set when using EDO mode DRAM. Data is sampled during read cycle on the
rising edge of CKIO. Also, RAS signal negation is delayed 1/2 a CKIO
machine cycle.
(Initial value)
(Initial value)
213

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