MT48H8M32LFB5-10 Micron Technology Inc, MT48H8M32LFB5-10 Datasheet - Page 73

• Manufacturer Part Number: MT48H8M32LFB5-10
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 51: Write – Full-page Burst
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
COMMAND
A0-A9, A11
BA0, BA1
DQM 0-3
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
BANK
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
t RCD
Notes: 1. A9 and A11 = “Don’t Care.”
t CL
T1
NOP
2.
3. Page left open; no
t CH
t
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
WR must be satisfied prior to PRECHARGE command.
t CMS
t CK
t DS
COLUMN m 1
BANK
T2
WRITE
D
IN
t CMH
t DH
m
1
t DS
t
D
RP.
IN
T3
NOP
m + 1
t DH
73
t DS
D
IN
T4
NOP
512 locations within same row
m + 2
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
NOP
m + 3
t DH
256Mb: x32 Mobile SDRAM
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t DS
Tn + 1
D
IN
NOP
m - 1
t DH
©2003 Micron Technology, Inc. All rights reserved.
Full-page burst does
not self-terminate. Can
use BURST TERMINATE
command to stop.
Timing Diagrams
BURST TERM
Tn + 2
DON’T CARE
2, 3
Tn + 3
NOP