MT48H8M32LFB5-10 Micron Technology Inc, MT48H8M32LFB5-10 Datasheet - Page 49

• Manufacturer Part Number: MT48H8M32LFB5-10
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 16: AC Functional Characteristics
Table 17: I
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Parameter
Parameter/Condition
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-z during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or
REFRESH command
Data-out to high-z from PRECHARGE command
Operating current: active mode; Burst = 2; READ or
WRITE;
Standby current: power-down mode; All banks idle;
CKE = LOW
Standby current: power-down mode; All banks idle;
CKE = HIGH
Standby current: active mode; CKE = HIGH; CS# = HIGH;
All banks active after
Standby current: active mode; CKE = LOW; CS# = HIGH;
All banks active; No accesses in progress
Operating current: burst mode; Continuous burst; READ
or WRITE; All banks active, half DQs toggling every cycle
Auto Refresh Current
CKE = HIGH; CS# = HIGH
Deep power-down
t
RC =
t
Notes: 5, 6, 7, 8, 9, 11; notes appear on page 54
Notes: 1, 5, 6, 11, 13; notes appear on page 54; V
RC (MIN)
DD
Specifications and Conditions (LC version)
t
RCD met; No accesses in progress
t
t
RFC =
RFC = 15.625µs
t
RFC (MIN)
CL = 3
CL = 2
CL = 1
Symbol
49
I
I
I
I
DD
DD
I
DD
DD
I
I
I
DD
DD
DD
DD
I
ZZ
DD
2N
3N
2P
3P
1
4
5
6
= +3.3V ±0.3V, V
Symbol
t
t
t
ROH(3)
ROH(2)
ROH(1)
t
t
t
t
t
t
t
CKED
t
t
DQM
DWD
t
t
t
t
DQD
MRD
CCD
DQZ
DAL
PED
BDL
CDL
RDL
DPL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-75
170
400
125
255
2.5
30
40
30
10
-75
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
MAX
-
DD
170
400
125
255
2.5
30
40
30
10
-8
256Mb: x32 Mobile SDRAM
Q = +3.3V ±0.3V
Electrical Specifications
-8
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
145
400
100
205
-10
2.5
30
40
30
10
©2003 Micron Technology, Inc. All rights reserved.
-10
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
1
Units
mA
mA
mA
mA
mA
mA
mA
µA
µA
Units
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
19, 28, 29
3, 18, 19,
3, 12, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
Notes
Notes
15, 21
16, 21
16, 21
28
28
28
28
28
28
17
14
14
17
17
17
17
17
17
26
17
17
17