MT48H8M32LFB5-10 Micron Technology Inc, MT48H8M32LFB5-10 Datasheet - Page 51

• Manufacturer Part Number: MT48H8M32LFB5-10
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20: I
Figure 31: Typical Self Refresh Current vs. Temperature – 3.3V Part
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
Temperature Compensated Self
Refresh Parameter/Condition
Self Refresh Current:
CKE = LOW – 4-bank refresh
Self Refresh Current:
CKE = LOW – 2-bank refresh
Self Refresh Current:
CKE = LOW – 1-bank refresh
Self Refresh Current:
CKE = LOW – Half-bank refresh
Self Refresh Current:
CKE = LOW – Quarter-bank refresh
600
550
500
450
400
350
300
250
200
150
100
50
0
Notes: 4, 30; notes appear on page 54 and page 55
DD
-40
7 – Self Refresh Current Options
-30
-20
-10
0
Temperature (C)
Temperature
10
MAX
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
20
30
51
V
40
DD
800
647
503
432
600
513
437
398
500
447
403
382
450
413
387
373
425
397
378
369
= 3.3
50
Micron Technology, Inc., reserves the right to change products or specifications without notice.
60
V
DD
800
647
503
432
600
513
437
398
500
447
403
382
450
413
387
373
425
397
378
369
= 2.5
70
256Mb: x32 Mobile SDRAM
80
V
Electrical Specifications
DD
600
480
370
315
450
380
320
290
375
330
295
278
338
305
283
271
319
293
276
268
= 1.8
©2003 Micron Technology, Inc. All rights reserved.
IDD7 – 4-Bank
IDD7 – 2-Bank
IDD7 – 1-Bank
IDD7 – 1/2-Bank
IDD7 – 1/4-Bank
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
Notes
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30
4, 30