MT48H8M32LFB5-10 Micron Technology Inc, MT48H8M32LFB5-10 Datasheet - Page 68

• Manufacturer Part Number: MT48H8M32LFB5-10
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 46: Write – Without Auto Precharge
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
COMMAND
A0–A9, A11
BA0, BA1
DQM 0-3
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Notes: 1. For this example, BL = 4, and the WRITE burst is followed by a manual PRECHARGE.
T1
NOP
DISABLE AUTO PRECHARGE
2. 15ns is required between <D
3. A9 and A11 = “Don’t Care.”
t CMS
t CL
quency.
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
COLUMN m 3
t DS
WRITE
T2
BANK
D
IN
t CMH
t CH
m
t DH
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
T4
IN
NOP
m + 2
t DH
68
IN
1
m + 3> and the PRECHARGE command, regardless of fre-
t DS
D
IN
T5
NOP
m + 3
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
T6
NOP
2
256Mb: x32 Mobile SDRAM
SINGLE BANK
PRECHARGE
ALL BANKs
BANK
T7
©2003 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t RP
NOP
T8
ACTIVE
ROW
ROW
BANK
T9
DON’T CARE