MT48H8M32LFB5-10 Micron Technology Inc, MT48H8M32LFB5-10 Datasheet - Page 61

• Manufacturer Part Number: MT48H8M32LFB5-10
• Description: IC SDRAM 256MBIT 100MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-10

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 39: READ – Without Auto Precharge
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
A0–A9, A11
COMMAND
BA0, BA1
DQM 0-3
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
Notes: 1. For this example, BL = 4, CL = 2, and the READ burst is followed by a manual PRECHARGE.
t CK
T1
NOP
2. A9 and A11 = “Don’t Care.”
DISABLE AUTO PRECHARGE
See Table 15, Electrical Characteristics and Recommended AC Operating Conditions, on
page 48.
t CMS
t CL
COLUMN m 2
T2
BANK
READ
t CH
t CMH
CL
T3
NOP
t LZ
t AC
61
T4
NOP
D
OUT
1
t OH
t AC
m
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
m + 1
t OH
t AC
SINGLE BANK
PRECHARGE
ALL BANKS
BANK(S)
D
256Mb: x32 Mobile SDRAM
T6
OUT
m + 2
t OH
t RP
t AC
©2003 Micron Technology, Inc. All rights reserved.
D
T7
NOP
OUT
Timing Diagrams
m + 3
t OH
t HZ
BANK
T8
ROW
ROW
ACTIVE
DON’T CARE
UNDEFINED