MT48H8M32LFB5-10 Micron Technology Inc, MT48H8M32LFB5-10 Datasheet - Page 36

IC SDRAM 256MBIT 100MHZ 90VFBGA

MT48H8M32LFB5-10

Manufacturer Part Number
MT48H8M32LFB5-10
Description
IC SDRAM 256MBIT 100MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT48H8M32LFB5-10

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (8Mx32)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Figure 23: PRECHARGE Command
Figure 24: Power-Down
PDF: 09005aef80d460f2/Source: 09005aef80cd8d41
256Mb SDRAM x32_2.fm - Rev. G 6/05
1. Maintain NOP input conditions for a minimum of 100us.
2. Issue PRECHARGE commands for all banks.
3. Issue two or more AUTO REFRESH commands.
In order to exit deep power-down mode, CKE must be asserted high. After exiting, the
following sequence is needed in order to enter a new command:
The values of the MODE REGISTER and EXTENDED MODE REGISTER will be retained
upon exit deep power down.
COMMAND
CKE
CLK
All banks idle
Enter power-down mode.
t CKS
A0-A9, A11
NOP
BA0,1
RAS#
CAS#
WE#
CKE
CLK
A10
CS#
Input buffers gated off
36
HIGH
VALID ADDRESS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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Exit power-down mode.
Bank Selected
All Banks
ADDRESS
BANK
256Mb: x32 Mobile SDRAM
> t CKS
DON’T CARE
NOP
©2003 Micron Technology, Inc. All rights reserved.
DON’T CARE
ACTIVE
Operation
t RCD
t RAS
t RC

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