MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 8

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

General Description
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
The 256Mb Mobile LPSDR is a high-speed CMOS, dynamic random-access memory con-
taining 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchro-
nous interface (all signals are registered on the positive edge of the clock signal, CLK).
Each of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16
bits. Each of the x32’s 67,108,864-bit banks is organized as 4096 rows by 512 columns by
32 bits.
Note:
1. Throughout the data sheet, various figures and text refer to DQs as DQ. DQ should be
interpreted as any and all DQ collectively, unless specifically stated otherwise. Addition-
ally, the x16 is divided into two bytes: the lower byte and the upper byte. For the lower
byte (DQ[7:0]), DQM refers to LDQM. For the upper byte (DQ[15:8]), DQM refers to
UDQM. The x32 is divided into four bytes. For DQ[7:0], DQM refers to DQM0. For
DQ[15:8], DQM refers to DQM1. For DQ[23:16], DQM refers to DQM2, and for
DQ[31:24], DQM refers to DQM3.
2. Complete functionality is described throughout the document; any page or diagram
may have been simplified to convey a topic and may not be inclusive of all requirements.
3. Any specific requirement takes precedence over a general statement.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
General Description
©2008 Micron Technology, Inc. All rights reserved.