MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 16

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 6: Capacitance
Note 1 applies to all parameters and conditions
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Parameter
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQ
Note:
1. This parameter is sampled. V
= 1 MHz.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
16
DD
, V
Symbol
DDQ
C
C
C
L1
L2
L0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= +1.8V; T
A
Min
= 25˚C; ball under test biased at 0.9V, f
2.0
2.0
2.5
Electrical Specifications
©2008 Micron Technology, Inc. All rights reserved.
Max
5.0
5.0
6.0
Unit
pF
pF
pF