MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 39

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command 1
Figure 12: Initialize and Load Mode Register
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CLK
CKE
A10
Power-up:
CLK stable
DQ
V
DD
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T = 100µs
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CKS
Notes:
NOP
T0
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High-Z
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CMH
CKH
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CK
1. PRE = PRECHARGE command, AR = AUTO REFRESH command, LMR = LOAD MODE REGIS-
2. NOPs or DESELECTs must only be provided during
3. NOPs or DESELECTs must only be provided during
TER command.
Precharge
All banks
all banks
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PRE
T1
t AH
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256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Tn + 1
AR
t
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RFC
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To + 1
AR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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2
Load mode
t AS t AH
t
AS
register
BA0 = L,
BA1 = L
Code
Code
Tp + 1
LMR
t
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RFC time.
MRD time.
AH
t
MRD
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Load extended
mode register
3
©2008 Micron Technology, Inc. All rights reserved.
BA0 = L,
BA1 = H
Code
BA0 = L,
Code
BA1 = L
LMR
Tq + 1
t
Initialization
MRD
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3
Valid
Valid
Valid
Valid
Tr + 1
Don’t Care
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