MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 24

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13: Target Output Drive Characteristics (Three-Quarter Strength)
Notes 1–2 apply to all parameters and conditions; characteristics are specified under best and worst process variations/con-
ditions
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Voltage (V)
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.85
0.90
0.95
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
Notes:
1. Table values based on nominal impedance of 37Ω (three-quarter drive strength) at V
2. The full variation in drive current, from minimum to maximum (due to process, voltage,
11.76
13.72
15.68
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
16.66
2
and temperature) will lie within the outer bounding lines of the I-V curves.
Min
0.00
1.96
3.92
5.88
7.84
9.80
.
Pull-Down Current (mA)
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
12.97
18.76
22.96
25.94
28.00
29.75
31.20
32.55
33.24
33.95
34.58
35.04
35.95
36.86
37.77
38.68
39.59
40.50
41.41
42.32
43.23
Max
0.00
24
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Output Drive Characteristics
–11.76
–13.72
–15.68
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–16.66
–1.96
–3.92
–5.88
–7.84
–9.80
Min
0.00
Pull-Up Current (mA)
©2008 Micron Technology, Inc. All rights reserved.
–12.97
–18.76
–22.96
–25.94
–28.00
–29.75
–31.20
–32.55
–33.24
–33.95
–34.58
–35.04
–35.95
–36.86
–37.77
–38.68
–39.59
–40.50
–41.41
–42.32
–43.23
Max
0.00
DDQ/