MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 74

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command
Figure 45: Single WRITE With Auto Precharge
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 1.
Enable auto precharge
t CMS
t CL
t DS
Column m
Bank
WRITE
T2
D
t CMH
IN
t DH
t CH
T3
NOP
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t WR
74
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
NOP
t RP
NOP
T6
PRECHARGE Operation
©2008 Micron Technology, Inc. All rights reserved.
ACTIVE
Bank
Row
Row
T7
NOP
T8
Don’t Care