MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 54

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 24: READ Continuous Page Burst
Command
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Row
Row
Bank
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t CL
T1
Note:
NOP
t CH
t CMS
1. For this example, CL = 2.
t CK
Column m
Bank
T2
READ
t CMH
CAS latency
T3
NOP
t LZ
t AC
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T4
NOP
D
OUT
t OH
t AC
54
All locations within same row
T5
Full-page burst does not self-terminate.
D
NOP
Can use BURST TERMINATE command.
OUT
t OH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t AC
Full page completed
T6
NOP
D
OUT
t OH
t AC
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Tn + 1
NOP
D
OUT
t OH
t AC
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BURST TERM
Tn + 2
READ Operation
D
OUT
t OH
t AC
Tn + 3
NOP
D
OUT
t OH
t HZ
Don’t Care
Undefined
Tn + 4
NOP