MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 73

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Command
Figure 44: WRITE Without Auto Precharge
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank
ACTIVE
Row
Row
T0
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
Disable auto precharge
1. For this example, BL = 4 and the WRITE burst is followed by a manual PRECHARGE.
t CMS
t CL
Column m
t DS
WRITE
Bank
T2
D
IN
t CMH
t DH
t CH
t DS
T3
NOP
D
IN
t DH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t DS
T4
NOP
D
IN
t DH
73
t DS
NOP
T5
D
IN
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WR
NOP
T6
PRECHARGE
Single bank
All banks
PRECHARGE Operation
Bank
T7
©2008 Micron Technology, Inc. All rights reserved.
t RP
NOP
T8
ACTIVE
Row
Row
Bank
T9
Don’t Care