MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 15

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Absolute Maximum Ratings
Table 4: Absolute Maximum Ratings
Table 5: DC Electrical Characteristics and Operating Conditions
Notes 1 and 2 apply to all parameters and conditions; V
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
Voltage/Temperature
Voltage on V
Voltage on inputs, NC, or I/O balls relative to V
Storage temperature (plastic)
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage
Output low voltage
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ are disabled; 0V ≤ V
Operating temperature:
DD
/V
IN
DDQ
≤ V
supply relative to V
Notes:
DD
Note:
(All other balls not under test = 0V)
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. V
1. All voltages referenced to V
2. A full initialization sequence is required before proper device operation is ensured.
3. V
4. I
V
be greater than one-third of the cycle rate. V
width ≤3ns.
OUT
DD
DD
IH
overshoot: V
.
and V
= 4mA for full drive strength. Other drive strengths require appropriate scale.
SS
DDQ
SS
must be within 300mV of each other at all times. V
OUT
Industrial
Commercial
IH,max
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
≤ V
DD
V
Symbol
DDQ
= V
DD
/V
T
V
/V
STG
DDQ
DDQ
IN
15
DDQ
SS
+ 2V for a pulse width ≤ 3ns, and the pulse width cannot
= 1.7–1.95V
.
Symbol
V
V
V
V
V
V
I
T
T
DDQ
OZ
I
DD
OH
OL
IH
L
IL
A
A
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–0.35
–0.35
Min
–55
0.8 × V
0.9 × V
IL
Min
undershoot: V
–0.3
–1.0
–1.5
–40
1.7
1.7
–
0
DDQ
DDQ
Electrical Specifications
V
DDQ
©2008 Micron Technology, Inc. All rights reserved.
IL,min
+1.95
+1.95
Max
+0.3
+0.2
+1.0
+1.5
+85
+70
Max
+150
+2.7
+2.7
–
+ 0.3
DDQ
= –2V for a pulse
must not exceed
Unit
μA
μA
˚C
˚C
V
V
V
V
V
V
Unit
˚C
V
Notes
3
3
4
4