MT48H8M32LFB5-6:H TR Micron Technology Inc, MT48H8M32LFB5-6:H TR Datasheet - Page 22

• Manufacturer Part Number: MT48H8M32LFB5-6:H TR
• Description: IC SDRAM 256MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H8M32LFB5-6:H TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. I 11/09 EN
10. For auto precharge mode, the precharge timing budget (
11. CLK must be toggled a minimum of two times during this period.
12. Required clocks are specified by JEDEC functionality and are not dependent on any tim-
13. Timing is specified by
14. Timing is specified by
15. Timing is specified by
16. Based on
ns reduction in slew rate. Input hold times remain unchanged. If the slew rate exceeds
4.5V/ns, functionality is uncertain.
after the first clock delay and after the last WRITE is executed.
ing parameter.
cycle rate.
t
CK (MIN), CL = 3.
Electrical Specifications – AC Operating Conditions
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
t
t
t
CKS. Clock(s) specified as a reference only at minimum cycle rate.
WR plus
WR.
22
t
RP. Clock(s) specified as a reference only at minimum
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
RP) begins at
©2008 Micron Technology, Inc. All rights reserved.
t
RP – (1 ×
t
CKns),