MT48H8M16LFB4-75 IT:J Micron Technology Inc, MT48H8M16LFB4-75 IT:J Datasheet - Page 26

• Manufacturer Part Number: MT48H8M16LFB4-75 IT:J
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75 IT:J

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

COMMAND INHIBIT
NO OPERATION (NOP)
LOAD MODE REGISTER (LMR)
ACTIVE
Figure 9:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
ACTIVE Command
The COMMAND INHIBIT function prevents new commands from being executed by the
SDRAM, regardless of whether the CLK signal is enabled. The SDRAM is effectively
deselected. Operations already in progress are not affected.
The NO OPERATION (NOP) command is used to perform a NOP to a selected SDRAM
(CS# is LOW). This prevents unwanted commands from being registered during idle or
wait states. Operations already in progress are not affected.
The mode registers are loaded via inputs A[n:0] (where An is the most significant address
term), BA0, and BA1(see “Mode Register” on page 36). The LOAD MODE REGISTER
command can only be issued when all banks are idle and a subsequent executable
command cannot be issued until
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access. The value on the BA0, BA1 inputs selects the bank, and the address
provided selects the row. This row remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A PRECHARGE command must be issued
before opening a different row in the same bank. Figure 9 shows the ACTIVE command.
BA0, BA1
Address
RAS#
CAS#
WE#
CLK
CKE
CS#
HIGH
Bank address
Row address
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
26
t
MRD is met.
Don’t Care
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2008 Micron Technology, Inc. All rights reserved.
Commands