MT48H8M16LFB4-75 IT:J Micron Technology Inc, MT48H8M16LFB4-75 IT:J Datasheet - Page 14

• Manufacturer Part Number: MT48H8M16LFB4-75 IT:J
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75 IT:J

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications
Absolute Maximum Ratings
Table 4:
Table 5:
Table 6:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
128mb_mobile_sdram_y35m__2.fm - Rev. E 4/09 EN
Voltage/Temperature
Parameter/Condition
Parameter
Voltage on Vdd/Vddq supply relative to Vss
Voltage on inputs, NC, or I/O balls relative to Vss
Storage temperature plastic
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; all inputs
Input low voltage: Logic 0; all inputs
Output high voltage
Output low voltage
Input leakage current:
Any input 0V ≤ Vin ≤ Vdd (all other balls not under test = 0V)
Output leakage current: DQ are disabled; 0V ≤ Vout ≤ Vddq
Operating temperature:
Industrial
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQ
Absolute Maximum Ratings
DC Electrical Characteristics and Operating Conditions
Notes: 1–2 apply to all parameters and conditions; Vdd/Vddq = 1.7–1.95V
Capacitance
Note 1 applies to all parameters and conditions
Notes:
Notes:
Notes:
Stresses greater than those listed in Table 4 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. Vdd and Vddq must be within 300mV of each other at all times. Vddq must not exceed Vdd.
1. All voltages referenced to Vss.
2. A full initialization sequence is required before proper device operation is ensured.
3. Vih overshoot: Vih (MAX) = Vddq + 2V for a pulse width ≤ 3ns, and the pulse width cannot
4. Iout = 4mA for full drive strength. Other drive strengths require appropriate scale.
1. This parameter is sampled. Vdd, Vddq = +1.8V; T
be greater than one-third of the cycle rate. Vil undershoot: Vil (MIN) = –2V for a pulse
width ≤ 3ns.
f = 1 MHz.
Vdd/Vddq
Symbol
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
T
Vin
STG
14
Symbol
Symbol
Vddq
Cio
Ci1
Ci2
Vdd
Voh
Vih
Vol
Ioz
Vil
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Ii
A
–0.35
–0.35
Min
–55
0.8 × Vddq Vddq + 0.3
0.9 × Vddq
A
Min
–0.3
–1.0
–1.5
= 25°C; ball under test biased at 0.9V,
–40
1.7
1.7
–
Min
1.5
1.5
3
Electrical Specifications
+150
Max
+2.8
+2.8
Max
+0.3
1.95
1.95
+85
0.2
1.0
1.5
©2008 Micron Technology, Inc. All rights reserved.
–
Max
4.0
4.0
5.0
Unit
µA
µA
°C
V
V
V
V
V
V
Unit
°C
V
Unit
pF
pF
pF
Notes
3
3
4
4