PIC18F452-I/LG Microchip Technology, PIC18F452-I/LG Datasheet - Page 69

• Manufacturer Part Number: PIC18F452-I/LG
• Description: IC MCU FLASH 16KX16 W/AD 44PLCC
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F452-I/LG

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 34
• Program Memory Size: 32KB (16K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 256 x 8
• Ram Size: 1.5K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-PLCC
• For Use With: XLT44L2 - SOCKET TRAN ICE 44PLCCDVA16XL441 - ADAPTER DEVICE ICE 44PLCC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.3
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD con-
trol bit (EECON1<7>), clear the CFGS control bit
EXAMPLE 6-1:
6.4
To write an EEPROM data location, the address must
first be written to the EEADR register and the data writ-
ten to the EEDATA register. Then the sequence in
Example 6-2 must be followed to initiate the write cycle.
The write will not initiate if the above sequence is not
exactly followed (write 55h to EECON2, write AAh to
EECON2, then set WR bit) for each byte. It is strongly
recommended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code exe-
EXAMPLE 6-2:
© 2006 Microchip Technology Inc.
Required
Sequence
Reading the Data EEPROM
Memory
Writing to the Data EEPROM
Memory
MOVLW
MOVWF
BCF
BCF
BSF
MOVF
MOVLW
MOVWF
MOVLW
MOVWF
BCF
BCF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
.
.
.
BCF
DATA_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, CFGS
EECON1, RD
EEDATA, W
DATA EEPROM READ
DATA EEPROM WRITE
DATA_EE_ADDR
EEADR
DATA_EE_DATA
EEDATA
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
INTCON, GIE
55h
EECON2
AAh
EECON2
EECON1, WR
INTCON, GIE
EECON1, WREN
;
; Data Memory Address to read
; Point to DATA memory
; Access program FLASH or Data EEPROM memory
; EEPROM Read
; W = EEDATA
;
; Data Memory Address to read
;
; Data Memory Value to write
; Point to DATA memory
; Access program FLASH or Data EEPROM memory
; Enable writes
; Disable interrupts
;
; Write 55h
;
; Write AAh
; Set WR bit to begin write
; Enable interrupts
; user code execution
; Disable writes on write complete (EEIF set)
(EECON1<6>),
(EECON1<0>). The data is available for the very next
instruction cycle; therefore, the EEDATA register can
be read by the next instruction. EEDATA will hold this
value until another read operation, or until it is written to
by the user (during a write operation).
cution (i.e., runaway programs). The WREN bit should
be kept clear at all times, except when updating the
EEPROM. The WREN bit is not cleared by hardware.
After a write sequence has been initiated, EECON1,
EEADR and EDATA cannot be modified. The WR bit
will be inhibited from being set unless the WREN bit is
set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EEPROM Write Complete
Interrupt Flag bit (EEIF) is set. The user may either
enable this interrupt, or poll this bit. EEIF must be
cleared by software.
and
then
PIC18FXX2
set
DS39564C-page 67
control
bit
RD