LH28F008SAT-85 Sharp Microelectronics, LH28F008SAT-85 Datasheet - Page 5

• Manufacturer Part Number: LH28F008SAT-85
• Description: IC FLASH 8MBIT 85NS 40TSOP
• Manufacturer: Sharp Microelectronics

Specifications of LH28F008SAT-85

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 85ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 40-TSOP
• Lead Free Status / RoHS Status: Contains lead / Request inventory verification
• Other names: 425-1836; LHF08S49

sharp
1.
SHARP’s LH28F008SAT-85 8M-bit Flash Memory is the highest density nonvolatile read/write solution for solid state
storage. The LH28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and
low power consumption provide a more reliable, lower power, lighter weight and higher performance alternative to tradi-
tional rotating disk technology. The LH28F008SAT-85 brings new capabilities to portable computing. Application and
operating system software stored in resident flash memory arrays provide instant-on rapid execute-in-place and protection
from obsolescence through in-system software updates. Resident software also extends system battery life and increases
reliability by reducing disk drive accesses.
For high density data acquisition applications, the LH28F008SAT-85 offers a more cost-effective and reliable alternative to
SRAM and battery. Traditional high density embedded applications, such as telecommunications, can take advantage of
the LH28F008SA’s nonvolatility, blocking and minimal system code requirements for flexible firmware and modular soft-
ware designs.
The LH28F008SAT-85 is offered in 40-lead TSOP (standard) package. Pin assignments simplify board layout when inte-
grating multiple devices in a flash memory array or subsystem. This device uses an integrated Command User Interface
and state machine for simplified block erasure and byte write. The LH28F008SAT-85 memory map consists of 16 sepa-
rately erasable 64K-byte blocks.
SHARP’s LH28F008SAT-85 employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity. Its 85ns access time provides superior performance when compared with magnetic storage media. A deep
powerdown mode lowers power consumption to 50µW maximum thru V
mentation and other low-power applications. The RP# power control input also provides absolute data protection during
system powerup/down.
* ETOX is a trademark of Intel Corporation.
•High-Density Symmetrically Blocked Architec-
•Extended Cycling Capability
•Automated Byte Write and Block Erase
•System Performance Enhancements
•Deep-Powerdown Mode
ture
- Sixteen 64K-Byte Blocks
- 100,000 Block Erase Cycles
- 1.6 Million Block Erase Cycles per Chip
- Command User Interface
- Status Register
- RY/BY# Status Output
- Erase Suspend Capability
- 10
FEATURES
µ
A I
CC
Maximum
8M-BIT (1MBit x 8) FLASH MEMORY
LH28F008SAT-85
LHF08S49
• Very High-Performance Read
• Operating Temperature
• SRAM-Compatible Write Interface
• Hardware Data Protection Feature
• Industry Standard Packaging
• ETOX™ * Nonvolatile Flash Technology
• CMOS Process (P-type silicon substrate)
• Not designed or rated as radiation hardened
- 85ns Maximum Access Time
- 0˚C to +70˚C
- Erase/Write Lockout during Power Transi-
- 40-Lead TSOP
- 12V Byte Write/Block Erase
tions
CC
, crucial in portable computing, handheld instru-
2