LH28F008SAT-85 Sharp Microelectronics, LH28F008SAT-85 Datasheet - Page 26

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LH28F008SAT-85

Manufacturer Part Number
LH28F008SAT-85
Description
IC FLASH 8MBIT 85NS 40TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F008SAT-85

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
85ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / Request inventory verification
Other names
425-1836
LHF08S49

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15. BLOCK ERASE AND BYTE WRITE PERFORMANCE
NOTES:
1. T
2. Excludes System-Level Overhead.
AC CHARACTERISTICS - Reset Operation
NOTES:
1. If RP# is asserted when the WSM is not busy (RY/BY#="1"), the reset will complete within 100ns.
2. A reset time, t PHQV , is required from the latter of RY/BY# or RP# going high until outputs are valid.
t
t
t
Block Erase Time
Block Write Time
Byte Write Time
Sym.
PLPH
PLRH
PLPLC
A
=+25˚C, 12.0V V
RP# Pulse Low Time
(If RP# is tied to V
RP# Low to Reset during Block Erase or Byte Write
(If RP# is tied to V
Reset Cycle Time (During Read Array Mode)
Parameter
RY/BY#(R)
RY/BY#(R)
RP#(P)
RP#(P)
PP
.
V
V
V
V
V
V
V
V
OH
OL
IH
IL
OH
OL
IH
IL
CC
CC
, this specification is not applicable)
, this specification is not applicable)
Parameter
AC Waveform for Reset Operation
Notes
2
2
RESET AC Specifications
(B) Reset During Block Erase or Byte Write
t
t
PLPH
PLPH
(A) Reset During Read Array Mode
LHF08S49
Min.
t
PLRH
t
PLPLC
Typ.
1.6
0.6
8
(1)
Max.
2.1
10
Notes
1,2
Unit
µs
s
s
Min.
100
4
Max.
12
Unit
µs
µs
ns
23

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