LH28F008SAT-85 Sharp Microelectronics, LH28F008SAT-85 Datasheet - Page 21

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LH28F008SAT-85

Manufacturer Part Number
LH28F008SAT-85
Description
IC FLASH 8MBIT 85NS 40TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F008SAT-85

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
85ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / Request inventory verification
Other names
425-1836
LHF08S49

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10. ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
During Read
During Block Erase/Byte Write
Temperature Under Bias
Storage Temperature
Voltage on Any Pin
(except V
with Respect to GND
V
Respect to GND during
Block Erase/Byte Write
V
with Respect to GND
Output Short Circuit Current
11. OPERATING CONDITIONS
NOTE:
1. ±0.25V V
12. DC CHARACTERISTICS
T
V
V
PP
CC
Symbol
I
I
I
I
I
Symbol
LI
LO
CCS
CCD
CCR
A
CC
CC
LH28F008SA-85 in its Standard configuration.
Program Voltage with
Supply Voltage
CC
CC
and V
Input Load Current
Output Leakage Current
V
V
Current
V
Operating Temperature
V
V
specifications reference the LH28F008SA-85 in its High Speed configuration. ±0.5V V
CC
CC
CC
CC
CC
.........................................0˚C to +70˚C
Standby Current
Deep PowerDown
Read Current
Supply Voltage (5V±0.5V)
Supply Voltage (5V±0.25V)
PP
Parameter
)
..........................-2.0V to +7.0V
.........................-2.0V to +7.0V
........................-65˚C to +125˚C
.................-2.0V to +14.0V
Parameter
.....................-10˚C to +80˚C
...........................100mA
................0˚C to +70˚C
Notes
1, 3
1
1
1
1
T
A
LHF08S49
(2,3)
Min.
=0
(1)
(2)
(2)
(4)
Notes
1
1
to +70
Typ.
NOTES:
1. Operating temperature is for commercial product defined by
2. All specified voltages are with respect to GND. Minimum DC
3. Maximum DC voltage on V
4. Output shorted for no more than one second. No more than
* WARNING: Stressing the device beyond the "Absolute
1.0
0.2
30
20
25
Maximum Ratings" may cause permanent damage.
These are stress ratings only. Operation beyond the
"Operating Conditions" is not recommended and
extended exposure beyond the "Operating Conditions"
may affect device reliability.
Min.
4.50
4.75
this specification.
voltage is -0.5V on input/output pins and -0.2V on V
V
-2.0V for periods <20ns. Maximum DC voltage on input/output
pins, V
may overshoot to V
periods <20ns.
one output shorted at a time.
0
PP
pins. During transitions, this level may undershoot to
Max.
±1.0
±10
100
2.0
10
35
50
CC
Max.
5.50
5.25
+70
and RP# pin is V
Unit
mA
mA
mA
µA
µA
µA
µA
Unit
°C
V
V
CC
+2.0V for periods <20ns.
V
V
V
V
V
CE#=RP#=V
V
CE#=RP#=V
RP#=GND±0.2V
I
V
f=8MHz, I
CMOS Inputs
V
f=8MHz, I
TTL Inputs
OUT
CC
IN
CC
OUT
CC
CC
CC
CC
CC
PP
CC
=V
+0.5V which, during transitions,
=V
=V
=V
=V
=V
=V
(RY/BY#)=0mA
may overshoot to +14.0V for
=V
specifications reference the
CC
CC
CC
CC
CC
CC
CC
Test Condition
CC
or GND
OUT
OUT
Max.
Max.
Max.
Max.
Max., CE#=GND
Max., CE#=V
or GND
IH
CC
=0mA
=0mA
±0.2V
CC
IL
and
18

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