MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 75

• Manufacturer Part Number: MT46V256M4TG-75:A
• Description: IC DDR SDRAM 1GBIT 7.5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V256M4TG-75:A

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 47:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Command
BA0, BA1
Address
DQ
DQS
CK#
CKE
A10
DM
CK
5
t IS
t IS
NOP
WRITE – DM Operation
T0
t IH
1
t IH
Notes:
Bank x
t IS
t IS
ACT
Row
Row
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at these
2. BL = 4.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T8.
5. DI b = data-in from column b; subsequent elements are provided in the programmed order.
6. See Figure 48 on page 76 for detailed DQ timing.
t IH
t IH
t CK
times.
t RCD
t RAS
NOP
T2
1
t CH
t CL
Bank x
WRITE
t IS
3
Col n
T3
t DQSS (NOM)
t IH
2
t WPRES t WPRE
75
t DS
NOP
T4
DI
b
1
t DH
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T4n
t DQSL
NOP
T5
t DQSH
1
1Gb: x4, x8, x16 DDR SDRAM
T5n
t WPST
NOP
T6
1
Transitioning Data
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t WR
NOP
T7
1
Operations
All banks
One bank
Bank x
Don’t Care
PRE
T8
4
t RP