MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 4

• Manufacturer Part Number: MT46V256M4TG-75:A
• Description: IC DDR SDRAM 1GBIT 7.5NS 66TSOP
• Manufacturer: Micron Technology Inc

Specifications of MT46V256M4TG-75:A

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

State Diagram
Figure 2:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core1.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Simplified State Diagram
Note:
applied
Power
This diagram represents operations within a single bank only and does not capture concur-
rent operations in other banks.
ACT = ACTIVE
BST = BURST TERMINATE
CKEH = Exit power-down
CKEL = Enter power-down
EMR = Extended mode register
LMR = LOAD MODE REGISTER
MR = Mode register
WRITE
Precharge
all banks
Power
PRE
LMR
EMR
PRE
WRITE A
MR
on
Write A
power-
Active
down
Write
CKE LOW
WRITE
LMR
4
CKE HIGH
WRITE A
PRE
precharged
Precharge
Micron Technology, Inc., reserves the right to change products or specifications without notice.
all banks
PREALL
active
ACT
Row
PRE
Idle
READ A
PRE = PRECHARGE
PREALL = PRECHARGE all banks
READ A = READ with auto precharge
REFA = AUTO REFRESH
REFS = Enter self refresh
REFSX = Exit self refresh
WRITE A = WRITE with auto precharge
CKEH
READ
REFS
READ A
PRE
REFSX
CKEL
1Gb: x4, x8, x16 DDR SDRAM
READ
Precharge
REFA
refresh
power-
down
Self
BST
Read A
Burst
Read
stop
Automatic sequence
Command sequence
©2003 Micron Technology, Inc. All rights reserved.
READ A
refresh
Auto
State Diagram
READ